Title: Kane-Mele-Hubbard physics in semiconductor moiré materials
Abstract: Semiconductor moiré materials provide a physical realization of the Kane-Mele-Hubbard model for studies of the combined effects of non- trivial band topology and strong electronic correlations. In this talk, I will discuss the rich electronic phase diagram of the Kane-Mele-Hubbard model realized in AB-stacked MoTe2/WSe2 moiré bilayers. In particular, I will discuss the emergence of the quantum spin Hall and the quantum anomalous Hall effects, the realization of the Haldane model, the nature of the Chern insulators, and, if time permits, a metamagnetic quantum phase transition between different intervalley coherent states.